聚合物鋰離子電池使用注意事項
一(yi)、電芯操(cao)作注，他說：想發財就去萬通商(shang)聯找優質表帶供貨(huo)商(shang)！注意(yi)事項
由于電(dian)芯屬于軟包裝，為保證電(dian)芯的(de)性能不受損害，必須小心對電(dian)芯進行操作(zuo)。
1.鋁(lv)箔(bo)包裝材料(liao)
鋁箔包(bao)裝(zhuang)材料易被尖銳部件(jian)刺損(sun)，諸(zhu)如鎳片、尖針。
禁止(zhi)用尖銳部件(jian)碰撞電池
應清(qing)潔工(gong)作環境，避免(mian)有(you)尖銳部(bu)件存在
禁(jin)止用釘子及其它(ta)利器刺穿電池
禁止將電池(chi)與(yu)金屬物，如項鏈(lian)、發(fa)夾(jia)等一起運(yun)輸或貯存
2.頂(ding)封邊
頂封邊(bian)非(fei)常容易受到損(sun)害
禁止彎折頂封(feng)邊
3.折邊
折邊(bian)在電池(chi)生產過(guo)程中已完成，并(bing)通過(guo)了密(mi)封測試(shi)。
禁止打(da)開(kai)或破壞折邊 4.極(ji)耳
極耳的機(ji)械強度并非異(yi)常堅(jian)固，特別是鋁片。
禁止(zhi)彎(wan)折(zhe)極耳(er)
5.機械撞擊(ji)
禁止墜落、沖(chong)擊(ji)、彎折電芯
禁止用(yong)錘子敲擊或踩(cai)踏電池
禁(jin)止敲擊(ji)或拋擲電池。
6.短路
任何時候(hou)禁止短路電(dian)芯，它會導致電(dian)芯嚴重損(sun)壞
禁止(zhi)用金屬物如(ru)電線短路連接(jie)電池正(zheng)負極
二、聚(ju)合物鋰離子電池測試標準環境
環境溫度： 20±5℃
相對(dui)濕度： 45~85%
在(zai)測試(shi)前(qian)電(dian)池都要先放完電(dian)
三、聚合物鋰離子電(dian)范充(chong)放(fang)電(dian)注(zhu)意事項(xiang)
1.充電
充(chong)電(dian)電(dian)流及充(chong)電(dian)電(dian)壓不得超過以下標準，如(ru)超過規定值可(ke)能會對電(dian)芯的充(chong)放電(dian)性(xing)能、機械性(xing)能及安全(quan)性(xing)造成造成損壞，進(jin)可(ke)能導致發熱及泄漏。
電池充電器必須能恒(heng)流(liu)恒(heng)壓充電；
充(chong)電(dian)時的(de)單(dan)體電(dian)池充(chong)電(dian)電(dian)流必(bi)須在1C5A以下(xia)；
充電時溫(wen)度范圍在0~+45℃；
充電時電壓不能超過4.23V。
2.放電
; 放電電流不(bu)得超(chao)過(guo)以下標準(zhun)，放電必須在本(ben)標準(zhun)范圍內進行。
單體電(dian)池放電(dian)電(dian)流(liu)必須(xu)小于2C5A；
放電(dian)時溫度(du)范圍在(zai)-20~+60℃；
單體電池(chi)放電終止電壓不小于2.75V。
3.過放電
需要注意的(de)是(shi)，在電(dian)芯長(chang)期未使用期間，它可能會用其(qi)自放(fang)電(dian)特性而處于(yu)某種過放(fang)電(dian)狀態。為防止過放(fang)電(dian)的(de)發生不(bu)能過放(fang)電(dian)使單(dan)體電(dian)池低于(yu)2.5V。
4.具體應(ying)用時要求加合格保護電路板。
四、聚合物鋰離(li)子電(dian)池貯存
電池長期貯(zhu)存的環(huan)境為：溫度-20~+35℃
相(xiang)對(dui)濕度 45~75%
電(dian)池(chi)貯存(cun)期(qi)近一年(nian)時要(yao)用標準(zhun)充電(dian)方式給(gei)電(dian)池(chi)充電(dian)10%~50%。
五、聚合物(wu)鋰離子電池(chi)運輸
電池應在10%~50%的充電狀態下運(yun)輸。
六、聚合(he)物鋰離子電池其它使用說(shuo)明
1.為(wei)了防(fang)止電池(chi)可能發生泄漏(lou)、發熱(re)、爆炸，請注意以下預防(fang)措施：
禁止(zhi)在任(ren)何(he)情況下拆(chai)卸電芯。
禁(jin)止將電池浸入水中或海(hai)水中，不能受潮。
禁止在熱源旁(pang)，如火、加熱器等，使用或放(fang)置電(dian)池。
禁止將電(dian)池加熱或丟入火中。
禁止直(zhi)接焊接電池。
禁(jin)止(zhi)在火(huo)邊或很熱的環境(jing)中充電。
&n，他說：想(xiang)發財就去萬通商聯(lian)找優質表(biao)帶供貨商！nbsp; 禁止將(jiang)電池放入微波爐或(huo)高(gao)壓容器內。
禁止在(zai)高溫下（如(ru)強陽(yang)光或很熱的汽車(che)中）使用或放置電池，否(fou)則會引起過熱、起火或者功能衰(shuai)退、壽命減小(xiao)。
2.聚合(he)物鋰離(li)子電池(chi)理論上不存在流動的電解液，但萬(wan)一有電解液泄漏而接觸(chu)到皮膚(fu)、眼睛或身體其它部位(wei)，應立即用清水沖冼電解液并就醫。
; 3.禁止使(shi)用(yong)已(yi)損(sun)壞的電芯(xin)（電芯(xin)塑料封邊損(sun)壞，外殼破(po)損(sun)，聞到(dao)電解液氣(qi)體(ti)，電解液泄漏等）。
如有(you)電解液泄(xie)漏或散發(fa)電解液氣味的電池應遠(yuan)離火源以避免著(zhu)火或爆炸。
鋰電池保護電路(lu)綜述
鋰離子電池保(bao)護(hu)(hu)電路(lu)包括過度充電保(bao)護(hu)(hu)、過電流／短路(lu)保(bao)護(hu)(hu)和(he)過放電保(bao)護(hu)(hu)，要求(qiu)過充電保(bao)護(hu)(hu)高精密度、保(bao)護(hu)(hu)IC功耗低、高耐壓以及零伏可充電等(deng)特性。本文詳細介紹了這三種保(bao)護(hu)(hu)電路(lu)的原(yuan)理、新功能和(he)特性要求(qiu)。
近年(nian)來，PDA、數字相機、手機、可攜式音(yin)訊設備(bei)和藍芽設備(bei)等(deng)越來越多(duo)的產品采(cai)用(yong)鋰電(dian)(dian)池(chi)(chi)(chi)作為主要(yao)電(dian)(dian)源。鋰電(dian)(dian)池(chi)(chi)(chi)具(ju)有體(ti)積小、能(neng)量密度高、無(wu)記憶效應、循環壽命高、高電(dian)(dian)壓電(dian)(dian)池(chi)(chi)(chi)和自放(fang)(fang)電(dian)(dian)率低等(deng)優點，與(yu)鎳鎘、鎳氫電(dian)(dian)池(chi)(chi)(chi)不太一樣，鋰電(dian)(dian)池(chi)(chi)(chi)必須考(kao)慮(lv)充電(dian)(dian)、放(fang)(fang)電(dian)(dian)時的安全(quan)性，以防止特性劣化。針對鋰電(dian)(dian)池(chi)(chi)(chi)的過(guo)充、過(guo)度放(fang)(fang)電(dian)(dian)、過(guo)電(dian)(dian)流(liu)及短路保(bao)(bao)護(hu)(hu)很重要(yao)，所以通(tong)常都會在(zai)電(dian)(dian)池(chi)(chi)(chi)包內設計保(bao)(bao)護(hu)(hu)線路用(yong)以保(bao)(bao)護(hu)(hu)鋰電(dian)(dian)池(chi)(chi)(chi)。
由于鋰離子電(dian)池(chi)能(neng)量(liang)密度(du)高，因(yin)此難(nan)以確(que)保電(dian)池(chi)的(de)安全性(xing)(xing)。在過度(du)充電(dian)狀態下(xia)，電(dian)池(chi)溫(wen)度(du)上升后能(neng)量(liang)將過剩，于是電(dian)解(jie)(jie)液分解(jie)(jie)而產(chan)生(sheng)氣體，因(yin)內(nei)壓上升而產(chan)生(sheng)自燃或破裂(lie)的(de)危險；反之，在過度(du)放電(dian)狀態下(xia)，電(dian)解(jie)(jie)液因(yin)分解(jie)(jie)導致電(dian)池(chi)特性(xing)(xing)及耐久(jiu)性(xing)(xing)劣化，因(yin)而降低可充電(dian)次數。
鋰離子(zi)電(dian)(dian)(dian)(dian)(dian)池(chi)的保(bao)(bao)護(hu)(hu)電(dian)(dian)(dian)(dian)(dian)路(lu)就是要(yao)確保(bao)(bao)這樣的過(guo)度(du)充(chong)電(dian)(dian)(dian)(dian)(dian)及放(fang)電(dian)(dian)(dian)(dian)(dian)狀態時(shi)的安全性，并(bing)防止特性劣化。鋰離子(zi)電(dian)(dian)(dian)(dian)(dian)池(chi)的保(bao)(bao)護(hu)(hu)電(dian)(dian)(dian)(dian)(dian)路(lu)是由保(bao)(bao)護(hu)(hu)IC及兩顆功(gong)率MOSFET所構成(cheng)，其(qi)中保(bao)(bao)護(hu)(hu)IC監(jian)視電(dian)(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)(dian)壓，當有過(guo)度(du)充(chong)電(dian)(dian)(dian)(dian)(dian)及放(fang)電(dian)(dian)(dian)(dian)(dian)狀態時(shi)切換到以(yi)外掛的功(gong)率MOSFET來保(bao)(bao)護(hu)(hu)電(dian)(dian)(dian)(dian)(dian)池(chi)，保(bao)(bao)護(hu)(hu)IC的功(gong)能(neng)有過(guo)度(du)充(chong)電(dian)(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)(hu)、過(guo)度(du)放(fang)電(dian)(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)(hu)和(he)過(guo)電(dian)(dian)(dian)(dian)(dian)流／短路(lu)保(bao)(bao)護(hu)(hu)。
一(yi)、過度充電保護(hu)
過(guo)(guo)度充(chong)電(dian)保護(hu)(hu)IC的原理為(wei)：當外部充(chong)電(dian)器對鋰電(dian)池充(chong)電(dian)時(shi)，為(wei)防止因溫度上升所導致的內壓上升，需(xu)終止充(chong)電(dian)狀(zhuang)態。此(ci)時(shi)，保護(hu)(hu)IC需(xu)檢測電(dian)池電(dian)壓，當到達4.25V時(shi)（假設(she)電(dian)池過(guo)(guo)充(chong)點為(wei)4.25V）即(ji)激(ji)活過(guo)(guo)度充(chong)電(dian)保護(hu)(hu)，將功率MOSFET由開轉為(wei)切斷，進而截止充(chong)電(dian)。
另外，還(huan)必須注(zhu)意因噪音所產生的過(guo)度(du)充(chong)電檢出誤動作，以免(mian)判定(ding)為過(guo)充(chong)保護。因此，需(xu)要設定(ding)延遲時(shi)間(jian)，并且延遲時(shi)間(jian)不(bu)能短于噪音的持續時(shi)間(jian)。
二、過度放(fang)電保護
在過(guo)度放(fang)電(dian)的情(qing)況下(xia)，電(dian)解(jie)液因分解(jie)而(er)導(dao)致電(dian)池特性(xing)劣化，并造成充電(dian)次(ci)數的降低。采(cai)用鋰電(dian)池保護(hu)IC可以避免(mian)過(guo)度放(fang)電(dian)現象產生，實現電(dian)池保護(hu)功能。
過(guo)(guo)度(du)放電(dian)(dian)(dian)保(bao)護IC原理(li)：為(wei)了防止(zhi)鋰(li)電(dian)(dian)(dian)池(chi)的過(guo)(guo)度(du)放電(dian)(dian)(dian)狀態(tai)，假設(she)鋰(li)電(dian)(dian)(dian)池(chi)接上負載，當(dang)鋰(li)電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓(ya)低(di)于其過(guo)(guo)度(du)放電(dian)(dian)(dian)電(dian)(dian)(dian)壓(ya)檢測點(dian)（假定為(wei)2.3V）時將(jiang)激活過(guo)(guo)度(du)放電(dian)(dian)(dian)保(bao)護，使(shi)功(gong)率(lv)MOSFET由開(kai)轉變為(wei)切斷而截止(zhi)放電(dian)(dian)(dian)，以(yi)避(bi)免電(dian)(dian)(dian)池(chi)過(guo)(guo)度(du)放電(dian)(dian)(dian)現象產生，并(bing)將(jiang)電(dian)(dian)(dian)池(chi)保(bao)持在低(di)靜(jing)態(tai)電(dian)(dian)(dian)流的待(dai)機模式，此時的電(dian)(dian)(dian)流僅0.1μA。
當(dang)鋰電(dian)(dian)(dian)(dian)池接上充電(dian)(dian)(dian)(dian)器，且(qie)此時(shi)(shi)鋰電(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)壓高于過(guo)度放電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)壓時(shi)(shi)，過(guo)度放電(dian)(dian)(dian)(dian)保護(hu)功能方可解除(chu)。另外，考慮(lv)到脈沖放電(dian)(dian)(dian)(dian)的情況，過(guo)放電(dian)(dian)(dian)(dian)檢測(ce)電(dian)(dian)(dian)(dian)路設有延遲時(shi)(shi)間(jian)以避免產生誤動作。
三、過電(dian)流及(ji)短路(lu)電(dian)流
; 因為不(bu)明原因（放電時(shi)或(huo)正負極遭(zao)金屬物誤(wu)觸(chu)）造成過(guo)電流或(huo)短路，為確保(bao)安全，必(bi)須使其立即停止放電。
; 過電(dian)流保護(hu)IC原(yuan)理(li)為，當放電(dian)電(dian)流過大或(huo)短(duan)路情況產(chan)生時，保護(hu)IC將激活(huo)過（短(duan)路）電(dian)流保護(hu)，此時過電(dian)流的(de)(de)檢測是將功率MOSFET的(de)(de)Rds(on) 當成感應阻抗用(yong)以(yi)監測其電(dian)壓的(de)(de)下降情形，如(ru)果比所定的(de)(de)過電(dian)流檢測電(dian)壓還高則(ze)停(ting)止放電(dian)，運算(suan)公式為:
V- = I × Rds(on) × 2（V- 為(wei)過電(dian)流(liu)檢測電(dian)壓，I 為(wei)放電(dian)電(dian)流(liu)）
假設 V- = 0.2V，Rds(on) = 25mΩ，則保護(hu)電流的大(da)小為 I = 4A
同樣地，過電流檢測也必須設(she)有延遲時間以防有突發電流流入時產生(sheng)誤動(dong)作。
通常在(zai)過電(dian)(dian)流(liu)產(chan)生后，若能去除(chu)過電(dian)(dian)流(liu)因(yin)素（例如馬上(shang)與(yu)負載(zai)脫離），將會恢(hui)復其正(zheng)常狀態(tai)，可(ke)以再進行正(zheng)常的充(chong)放電(dian)(dian)動作。
四、鋰電(dian)池保護IC的新功能
除了上述(shu)的鋰電池保護IC功能(neng)之外，下面這(zhe)些新的功能(neng)同(tong)樣值得關注(zhu)：
1.充電時的過電流保護(hu)
當連(lian)接充(chong)電(dian)器進行(xing)充(chong)電(dian)時(shi)突然(ran)產生過電(dian)流(liu)(liu)（如充(chong)電(dian)器損壞），電(dian)路立即(ji)進行(xing)過電(dian)流(liu)(liu)檢(jian)測(ce)，此(ci)時(shi)Cout將由高轉(zhuan)為低，功率MOSFET由開轉(zhuan)為切(qie)斷，實現保護(hu)功能(neng)。
V- = I × Rds(on) × 2
（I 是充(chong)電(dian)電(dian)流(liu)(liu)；Vdet4，過電(dian)流(liu)(liu)檢測電(dian)壓，Vdet4 為 -0.1V）
2.過度充電時的(de)鎖定模式
通常保(bao)護(hu)(hu)IC在(zai)過度(du)充(chong)電(dian)(dian)(dian)(dian)(dian)保(bao)護(hu)(hu)時將(jiang)經(jing)過一(yi)段延(yan)遲時間，然后(hou)就會將(jiang)功率MOSFET切斷以達(da)到(dao)保(bao)護(hu)(hu)的(de)(de)目(mu)的(de)(de)，當鋰(li)電(dian)(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)(dian)壓(ya)一(yi)直下(xia)降到(dao)解除點（過度(du)充(chong)電(dian)(dian)(dian)(dian)(dian)滯后(hou)電(dian)(dian)(dian)(dian)(dian)壓(ya)）時就會恢(hui)復(fu)，此時又會繼續充(chong)電(dian)(dian)(dian)(dian)(dian)→保(bao)護(hu)(hu)→放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)→充(chong)電(dian)(dian)(dian)(dian)(dian)→放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)。這種狀(zhuang)(zhuang)態的(de)(de)安(an)全性問(wen)題將(jiang)無法獲得有(you)效解決，鋰(li)電(dian)(dian)(dian)(dian)(dian)池將(jiang)一(yi)直重(zhong)復(fu)著充(chong)電(dian)(dian)(dian)(dian)(dian)→放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)→充(chong)電(dian)(dian)(dian)(dian)(dian)→放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)的(de)(de)動作(zuo)，功率MOSFET的(de)(de)柵極將(jiang)反復(fu)地處于高低電(dian)(dian)(dian)(dian)(dian)壓(ya)交(jiao)替(ti)狀(zhuang)(zhuang)態，這樣(yang)可能會使MOSFET變(bian)熱，還會降低電(dian)(dian)(dian)(dian)(dian)池壽命，因此鎖(suo)(suo)定模(mo)式很重(zhong)要。假(jia)如鋰(li)電(dian)(dian)(dian)(dian)(dian)保(bao)護(hu)(hu)電(dian)(dian)(dian)(dian)(dian)路在(zai)檢測到(dao)過度(du)充(chong)電(dian)(dian)(dian)(dian)(dian)保(bao)護(hu)(hu)時有(you)鎖(suo)(suo)定模(mo)式，MOSFET將(jiang)不會變(bian)熱，且(qie)安(an)全性相對提高很多(duo)。
在過度(du)充電(dian)(dian)保(bao)護之后，只要充電(dian)(dian)器連接在電(dian)(dian)池(chi)包上，此時將(jiang)進入過充鎖定模式(shi)。此時，即使(shi)鋰電(dian)(dian)池(chi)電(dian)(dian)壓下降也(ye)不會產生(sheng)再(zai)充電(dian)(dian)的情形，將(jiang)充電(dian)(dian)器移除并連接負(fu)載即可恢復充放電(dian)(dian)的狀(zhuang)態。
3.減少保護(hu)電(dian)路組(zu)件尺寸
將過(guo)度充電(dian)(dian)和(he)短路保(bao)護用的延遲電(dian)(dian)容器(qi)整合在(zai)到保(bao)護IC里面，以減(jian)少保(bao)護電(dian)(dian)路組件尺寸。
五、對保護IC性，他說：想發財就去萬通商聯找優質鉸鏈供貨商！性能(neng)的要求
1.過度(du)充電保護的高精密度(du)化
當(dang)鋰離子電(dian)(dian)(dian)池(chi)有(you)過(guo)度(du)充(chong)(chong)(chong)電(dian)(dian)(dian)狀態(tai)(tai)時(shi)，為(wei)防(fang)止(zhi)(zhi)因(yin)溫度(du)上(shang)升所導致的內壓(ya)上(shang)升，須截止(zhi)(zhi)充(chong)(chong)(chong)電(dian)(dian)(dian)狀態(tai)(tai)。保護IC將(jiang)檢(jian)測電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓(ya)，當(dang)檢(jian)測到過(guo)度(du)充(chong)(chong)(chong)電(dian)(dian)(dian)時(shi)，則過(guo)度(du)充(chong)(chong)(chong)電(dian)(dian)(dian)檢(jian)測的功率MOSFET使(shi)之切(qie)斷而截止(zhi)(zhi)充(chong)(chong)(chong)電(dian)(dian)(dian)。此時(shi)應(ying)注(zhu)意的是過(guo)度(du)充(chong)(chong)(chong)電(dian)(dian)(dian)的檢(jian)測電(dian)(dian)(dian)壓(ya)的高(gao)精密(mi)度(du)化，在電(dian)(dian)(dian)池(chi)充(chong)(chong)(chong)電(dian)(dian)(dian)時(shi)，使(shi)電(dian)(dian)(dian)池(chi)充(chong)(chong)(chong)電(dian)(dian)(dian)到飽滿的狀態(tai)(tai)是使(shi)用者很關心的問題，同(tong)時(shi)兼(jian)顧到安全性問題，因(yin)此需要(yao)在達到容許電(dian)(dian)(dian)壓(ya)時(shi)截止(zhi)(zhi)充(chong)(chong)(chong)電(dian)(dian)(dian)狀態(tai)(tai)。要(yao)同(tong)時(shi)符(fu)合這兩個條件，必須有(you)高(gao)精密(mi)度(du)的檢(jian)測器，目前檢(jian)測器的精密(mi)度(du)為(wei)25mV，該精密(mi)度(du)將(jiang)有(you)待于進一步(bu)提高(gao)。
2.降低保護IC的耗電
隨著使(shi)用(yong)時間的增(zeng)加(jia)，已充(chong)過電(dian)(dian)的鋰離子電(dian)(dian)池(chi)電(dian)(dian)壓(ya)會(hui)逐漸降低(di)，最后低(di)到規格標(biao)準值以下(xia)，此時就需要再度充(chong)電(dian)(dian)。若(ruo)未充(chong)電(dian)(dian)而繼續使(shi)用(yong)，可(ke)能造成由于過度放(fang)電(dian)(dian)而使(shi)電(dian)(dian)池(chi)不能繼續使(shi)用(yong)。為防止過度放(fang)電(dian)(dian)，保(bao)護IC必須檢(jian)測電(dian)(dian)池(chi)電(dian)(dian)壓(ya)，一旦達到過度放(fang)電(dian)(dian)檢(jian)測電(dian)(dian)壓(ya)以下(xia)，就得使(shi)放(fang)電(dian)(dian)一方的功率(lv)MOSFET切斷(duan)而截止放(fang)電(dian)(dian)。但此時電(dian)(dian)池(chi)本身(shen)仍有自然放(fang)電(dian)(dian)及保(bao)護IC的消耗電(dian)(dian)流存在，因此需要使(shi)保(bao)護IC消耗的電(dian)(dian)流降到最低(di)程(cheng)度。
3.過電(dian)流／短路保護需有低(di)檢測電(dian)壓(ya)及(ji)高精(jing)密度的要求(qiu)
因不明原因導致短(duan)路時必須立即停止(zhi)放電(dian)。過(guo)(guo)電(dian)流(liu)的(de)檢(jian)測是(shi)以功率MOSFET的(de)Rds(on)為(wei)(wei)感應阻抗(kang)，以監視其(qi)電(dian)壓(ya)的(de)下降，此時的(de)電(dian)壓(ya)若比(bi)過(guo)(guo)電(dian)流(liu)檢(jian)測電(dian)壓(ya)還高時即停止(zhi)放電(dian)。為(wei)(wei)了使(shi)功率MOSFET的(de)Rds(on)在充電(dian)電(dian)流(liu)與(yu)放電(dian)電(dian)流(liu)時有(you)效應用，需使(shi)該阻抗(kang)值盡量低(di)，目前該阻抗(kang)約為(wei)(wei)20mΩ~30mΩ，這樣過(guo)(guo)電(dian)流(liu)檢(jian)測電(dian)壓(ya)就(jiu)可(ke)較低(di)。
4.耐高電壓(ya)
電池包(bao)與充電器(qi)連接時(shi)瞬間會(hui)有高壓(ya)產生，因此保護IC應滿(man)足耐高壓(ya)的要求。
5.低電池功耗(hao)
在保護狀態(tai)時，其靜態(tai)耗電(dian)流必(bi)須要小0.1μA。
6.零伏(fu)可(ke)充電
有些電(dian)池在存放的(de)過程中(zhong)可能因為放太久或不正常的(de)原(yuan)因導致(zhi)電(dian)壓低(di)到0V，故保護IC需要在0V時(shi)也可以(yi)實現充電(dian)。
六、保護IC發展(zhan)展(zhan)望
如前所(suo)述(shu)，未來保護IC將(jiang)(jiang)進一步(bu)提(ti)高(gao)檢(jian)測電(dian)壓(ya)的(de)精(jing)密度、降低保護IC的(de)耗電(dian)流(liu)和提(ti)高(gao)誤動作(zuo)防(fang)止功能等(deng)，同時充(chong)電(dian)器(qi)連接(jie)端子的(de)高(gao)耐壓(ya)也是研發的(de)重點(dian)。 在封裝方面，目前已由SOT23-6逐漸轉向SON6封裝，將(jiang)(jiang)來還有CSP封裝，甚至出現COB產品用以滿足現在所(suo)強調(diao)的(de)輕薄短小要求。
在功(gong)(gong)(gong)能方(fang)面(mian)，保護IC不需要(yao)整合所有(you)的功(gong)(gong)(gong)能，可(ke)(ke)根據不同的鋰(li)電(dian)池材(cai)料開(kai)發出單一保護IC，如(ru)只有(you)過充保護或過放保護功(gong)(gong)(gong)能，這樣可(ke)(ke)以大幅減(jian)少成本及尺寸。
當然，功(gong)能組件單(dan)晶體(ti)化是不變的目(mu)標，如目(mu)前手機制造商(shang)都朝向將(jiang)保(bao)護IC、充電電路(lu)以(yi)及電源管理IC等周邊電路(lu)與(yu)邏輯IC構成雙芯(xin)片(pian)(pian)(pian)的芯(xin)片(pian)(pian)(pian)組，但目(mu)前要使功(gong)率MOSFET的開路(lu)阻(zu)抗(kang)降低，難以(yi)與(yu)其它(ta)IC整合，即(ji)使以(yi)特殊技術(shu)制成單(dan)芯(xin)片(pian)(pian)(pian)，恐怕(pa)成本將(jiang)會過高(gao)。因(yin)此，保(bao)護IC的單(dan)晶體(ti)化將(jiang)需一(yi)段(duan)時(shi)間來解決(jue)。