，一個控(kong)制規(gui)(gui)則表中會出現空項,這(zhe)是不能滿(man)足實際控(kong)制要求(qiu)的(de)。為了取(qu)得更滿(man)意的(de)控(kong)制效果，可以對原始(shi)的(de)控(kong)制規(gui)(gui)則進(jin)行改進(jin)。這(zhe)時，應以粗糙的(de)控(kong)制規(gui)(gui)則為基(ji)礎，通過(guo)仿真實驗和系統調試加(jia)以完善。

4.模糊(hu)智(zhi)能(neng)充電系統的工(gong)作(zuo)原理(li)及結(jie)構

智能充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)系統主(zhu)要由充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)源和(he)單片機控(kong)制(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)兩部分組成。220V的(de)(de)(de)交(jiao)流(liu)(liu)(liu)(liu)市(shi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)經整(zheng)流(liu)(liu)(liu)(liu)濾波(bo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)變(bian)為脈(mo)動的(de)(de)(de)310V高壓(ya)(ya)直(zhi)流(liu)(liu)(liu)(liu)。然后經DC-DC變(bian)換(huan)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)（脈(mo)沖(chong)功率變(bian)壓(ya)(ya)器）變(bian)為充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)所需(xu)的(de)(de)(de)60V直(zhi)流(liu)(liu)(liu)(liu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)。為了保證輸(shu)(shu)出電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)的(de)(de)(de)穩定(ding)性，采(cai)用(yong)了UC3842對60V直(zhi)流(liu)(liu)(liu)(liu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)進行穩壓(ya)(ya)。二(er)次(ci)斬波(bo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)主(zhu)要由MOSFET管(guan)、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)感、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)容(rong)和(he)二(er)極管(guan)組成，輸(shu)(shu)出24-36V的(de)(de)(de)充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)。控(kong)制(zhi)部分采(cai)用(yong)C504單片機，通(tong)過對蓄電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)端電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)信號(hao)的(de)(de)(de)采(cai)集(ji)(ji)、分析處(chu)理、模(mo)糊推理[8]、模(mo)糊決策等，控(kong)制(zhi)二(er)次(ci)斬波(bo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)中的(de)(de)(de)MOSFET管(guan)的(de)(de)(de)通(tong)斷時間(jian)來控(kong)制(zhi)充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)。控(kong)制(zhi)部分還包括對電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)和(he)溫度(du)的(de)(de)(de)采(cai)集(ji)(ji)以及電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)和(he)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)的(de)(de)(de)顯示。總體(ti)結構(gou)如圖(tu)3所示。

圖(tu)3 智能充電系統總(zong)體(ti)結(jie)構框圖(tu)

5 蓄電(dian)(dian)(dian)池的(de)充(chong)(chong)放電(dian)(dian)(dian)過(guo)程是(shi)一個復雜的(de)過(guo)程，要(yao)用精確數(shu)學模型(xing)對(dui)蓄電(dian)(dian)(dian)池充(chong)(chong)電(dian)(dian)(dian)的(de)控(kong)制(zhi)則有相當的(de)難度。蓄電(dian)(dian)(dian)池的(de)充(chong)(chong)電(dian)(dian)(dian)控(kong)制(zhi)系統是(shi)個非線性的(de)、時變的(de)、有干(gan)擾的(de)、具有純滯(zhi)后的(de)控(kong)制(zhi)系統，在充(chong)(chong)放電(dian)(dian)(dian)過(guo)程中涉及到很多參數(shu)，如(ru)充(chong)(chong)電(dian)(dian)(dian)率、最大允許充(chong)(chong)電(dian)(dian)(dian)電(dian)(dian)(dian)流、內(nei)阻、出氣點電(dian)(dian)(dian)壓(ya)、溫度、壽(shou)命等。

   作者創新點為(wei)：

(1) 隸(li)(li)屬函(han)(han)數(shu) 的(de)(de)形狀，對(dui)控制(zhi)效果影響(xiang)較(jiao)大(da)。窄型隸(li)(li)屬函(han)(han)數(shu)，反(fan)映(ying)模糊(hu)集(ji)合(he)具(ju)有高(gao)(gao)分辨特(te)性(xing)。如果系(xi)(xi)統誤(wu)差(cha)，采用(yong)高(gao)(gao)分辨率模糊(hu)集(ji)合(he)，則誤(wu)差(cha)控制(zhi)的(de)(de)靈敏度就會提高(gao)(gao)。在系(xi)(xi)統誤(wu)差(cha)較(jiao)大(da)的(de)(de)范圍(wei)內，采用(yong)具(ju)有低分辨率隸(li)(li)屬函(han)(han)數(shu)的(de)(de)模糊(hu)集(ji)合(he)；而在系(xi)(xi)統誤(wu)差(cha)較(jiao)小，或接近于零時，宜采用(yong)具(ju)有高(gao)(gao)分辨率隸(li)(li)屬函(han)(han)數(shu)的(de)(de)模糊(hu)集(ji)合(he)。

(2)在定義某一語言(yan)變(bian)量，如誤差、誤差變(bian)化率和控制量變(bian)化的(de)全部集合時，要考慮其(qi)對(dui)論(lun)域(yu)[-n,+n]的(de)覆蓋程度，語言(yan)變(bian)量的(de)全部模(mo)(mo)糊(hu)集合所包含的(de)非零隸屬度對(dui)應的(de)論(lun)域(yu)元(yuan)素個(ge)數(shu)，應是模(mo)(mo)糊(hu)集合總(zong)數(shu)的(de)3-4倍。

，將(jiang)模糊控(kong)制表(biao)格中的(de)數據(ju)存(cun)儲于微控(kong)制器外(wai)部存(cun)儲空間中，基本上克服了這個缺(que)(que)點。芯(xin)片電可擦除X5045）查(cha)表(biao)法(fa)(fa)作為模糊控(kong)制算法(fa)(fa)有表(biao)格結構(gou)單一，修改繁(fan)瑣，缺(que)(que)乏靈活(huo)性的(de)缺(que)(que)點。針對使用查(cha)表(biao)法(fa)(fa)作為模糊控(kong)制算法(fa)(fa)暴露的(de)缺(que)(que)點，在硬(ying)件設計中與以補(bu)償，加入了一片